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savantic semiconductor product specification silicon npn power transistors BU921 description with to-3 package high current;high voltage darlington applications designed for automotive ignition applications and inverter circuits for motor control. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i cm collector current-peak 15 a i b base current 5 a p t total power dissipation t c =25 120 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU921 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =5a;i b =50ma 1.8 v v cesat-2 collector-emitter saturation voltage i c =7 a;i b =140ma 1.8 v v besat-1 base-emitter saturation voltage i c =5a;i b =50ma 2.2 v v besat-2 base-emitter saturation voltage i c =7 a;i b =140ma 2.5 v i ces collector cut-off current v ce =450v;v be =0 t c =150 0.25 0.50 ma i ceo collector cut-off current v ce =400v;i b =0 0.25 ma i ebo emitter cut-off current v eb =5v; i c =0 50 ma h fe dc current gain i c =2a; v eb =2v 500 v f diode forward voltage i f =7a 2.5 v savantic semiconductor product specification 3 silicon npn power transistors BU921 package outline fig.2 outline dimensions |
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